Description
The TOSHIBA TLP251 consists of an infrared emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
( to 15A)
Input threshold current: IF=5mA(max.)
Supply current (ICC): 11mA(max.)
Supply voltage (VCC): 10−35V
Output current (IO): ±0.4A(max.)
Switching time (tpLH / tpHL): 1μs(max.)
Isolation voltage: 2500Vrms(min.)
