Description
Type Designator: IRF640N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 150 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 18 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 67 nC
trⓘ – Rise Time: 19 nS
Cossⓘ – Output Capacitance: 185 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO220AB
