Description
DESCRIPTION :
General Description
Fairchild’s UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description SGH80N60UFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
IC
Collector Current @ TC = 25°C 80 A
Collector Current @ TC = 100°C 40 A
ICM (1) Pulsed Collector Current 220 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
IFM Diode Maximum Forward Current 280 A
PD Maximum Power Dissipation @ TC = 25°C 195 W
Maximum Power Dissipation @ TC = 100°C 78 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Temp. for Soldering
Purposes,/8” from Case for 5 Seconds 300 °C
