Description
Type Designator: FQPF12N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 51 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 12 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 48 nC
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220F
