Description
Type Designator: IRLR2905Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 110 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ – Maximum Drain Current: 60 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 23 nC
trⓘ – Rise Time: 130 nS
Cossⓘ – Output Capacitance: 230 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO252
