Description
Type Designator: IRF830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 100 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 4.5 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 22 nC
trⓘ – Rise Time: 8 nS
Cossⓘ – Output Capacitance: 120 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
